FQA19N60
Manufacturer:
On Semiconductor
Mfr.Part #:
FQA19N60
Datasheet:
Description:
MOSFETs TO-3PN-3 Through Hole N-Channel number of channels:1 300 W 600 V Continuous Drain Current (ID):18.5 A 70 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 300 W |
| Number of Channels | 1 |
| Input capacitance | 3.6 nF |
| Continuous Drain Current (ID) | 18.5 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 70 nC |
| Drain to Source Resistance | 380 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Gate to Source Threshold Voltage | 5 V |
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